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2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings
(Ta=25°C) Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Symbol 2SC4517 2SC4517A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 3(Pulse6) 1.5 30(Tc=25°C) 150 –55 to +150 1000
2SC4517 2SC4517A 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ
Unit
µA
V V
13.0min 16.9±0.3 8.4±0.2
µA
V MHz pF
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.
2SC4517A Datasheet
