The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C)
Symbol 2SC4518 2SC4518A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 5(Pulse10) 2.5 35(Tc=25°C) 150 –55 to +150 1000 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=–0.35A VCB=10V, f=1MHz
(Ta=25°C) 2SC4518 2SC4518A 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V V MHz pF Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
µA
13.0min
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.
2SC4518 Datasheet
