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60V N -ch MOSFET
2SK3711
December 2005
■Features
• Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed
■Applications
• Electric power steering • High current switching
■Equivalent circuit
D (2)
■Package—TO3P
G (1)
S (3)
Absolute maximum ratings
Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current
Pulsed Drain Current Maximum Power Dissipation
Single Pulse Avalanche Energy
Symbol VDSS VGSS
ID ID (pulse) *1
PD
EAS *2
(Ta=25°C)
Rating
Unit
60
V
±20
V
±70A
A
±140A
A
130 (Tc=25°C)
W
468
mJ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
*1 PW≤100μs, duty cycle≤1% *2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.
2SK3711 Datasheet
