The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4466 120 80 6 6 3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4466 10max 10max 80min 50min∗ 1.5max 20typ 110typ V pF
20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
4.0
V
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)
5.45±0.
C4466 Datasheet
