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2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5101 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.
C5101 Datasheet
