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2SC5287
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5287 900 550 7 5(Pulse10) 2.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC5287 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V MHz pF
5.45±0.1 B C E 20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=–0.35A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
V
19.9±0.3
4.0
a b
ø3.2±0.1
V
2 3 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 1.
C5287 Datasheet
