The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOS FET FKV560 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg Ratings 50 ± 20 ± 60 ± 180 40 (Tc=25ºC) 150 –55 to +150 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V min 50 +10 –5 100 2.3 9 2000 1000 150 To be defined 1.0 1.5 11 Ratings typ max
(Ta=25ºC) Unit V µA µA V S mΩ pF pF pF ns ns ns ns V
External Dimensions FM20 (full-mold)
3.3±0.2 10.0±0.2 4.2±0.2
2.8 C 0.5
1.3 20.0
16.9±0.3 8.4±0.2 0.8 4.0±0.2
±0.
FKV560 Datasheet
