SAP15P Datasheet | Sanken

Darlington transistors with built-in temperature pensation diodes for audio amplifier applications SAPseries Features q Built-in temperature pensation diodes and one emitter resistor q Real time temperature pensation The temperature pensation diodes are mounted on one chip and placed in the center of the chip to detect temperature rises directly. q Elimination of the temperature dependency of the idling current The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable. q Symmetrical design for the PNP and the NPN pinouts The new design minimizes the length of the pattern layout, and output distortions are controlled. q Darlington transistors, temperature pensation diodes and one emitter resistor are incorporated in one package, so labor for parts insertion as well as the parts count is reduced. Line up Part Number SAP15P/SAP15N SAP10P/SAP10N SAP08P/SAP08N PC (W) 150 100 80 VCEO (V ) 160 150 150 IC (A) 15 12 10 h FE 5000 to 20000 5000 to 20000 5000 to 20000 Emitter resistor (Ω) 0.22 0.22 0.22 s External Dimentions (Unit : mm) 15.4±0.3 9.9±0.2 3.2±0.2 5±0.2 4.5±0.2 1.6±0.2 s Equivalent Circuit Diagram R :70Ω Typ. Emitter resistor RE: 0.22Ω Typ. 3.3±0.2 3.4max a b 2±0.1 (36°) 7±0.2 22±0.3 23±0.3 28±0.3 R: 70Ω Typ. Emitter resistor RE: 0.22Ω Typ. 1±0.1 (41) (2.5) +0.2 0.65 - 0.1 - 0.1 2.54±0.1 3.81±0.1 (7.62) (12.7) 17.8±0.3 4±0.1 +0.2 2.54±0.1 3.81±0.1 (18) - 0.1 +0.2 - 0.1 +0.2 Weight: approx 8.3g a. Part Number b. Lot Number BD C S E E S C D B ➀➁ ➂...