q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use (VCE (sat) 0.2V) q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit q Built-in independent overcurrent and thermal protection circuit in each circuit q Built-in protection against reverse connection of power supply q Tj = 150ºC guaranteed
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3-circuit High-side Power Switch Array SLA2501M
Features
q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use (VCE (sat) 0.2V) q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit q Built-in independent overcurrent and thermal protection circuit in each circuit q Built-in protection against reverse connection of power supply q Tj = 150ºC guaranteed
External Dimensions (unit: mm)
31 ± 0.2 24.4 ± 0.2 3.2 ± 0.15
Ellipse 3.2 ± 0.15 • 3.8
4.8 ± 0.2 1.7 ± 0.1
12.9 ± 0.2
16 ± 0.2 9.9 ± 0.2
a b
2.45 ± 0.2
6.4 ± 0.5
1.15 –0.1
+0.2
0.65 –0.1
+0.2
0.55 –0.1
+0.2
14 • P2.03 ± 0.1= (28.
SLA2501M Datasheet
