TFD312S
Features q With built-in Avalanche diode q Average on-state current: IT(AV)=3A q Gate trigger current: IGT=10m A max q Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.)
13.0 min
External Dimensions
(Unit: mm)
8.4±0.2 0.2 4.0±
10.0±0.2 φ 3.3±0.2
4.2±0.2 C 0.5 2.8
16.9±
A a b
1.35±0.15 1.35± +0.2 0.85
- 0.1
0.8±0.2
3.9±
2.54 2.2±0.2
+0.2 0.45
- 0.1
2.4±0.2 a. Part Number b. Lot Number
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g s Absolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Average on-state current RMS on-state current Surge on-state current Squared rated current and time product Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM IT (AV) IT (RMS) ITSM I2t VFGM VRGM PGM PG (AV) Tj Tstg VISO
Ratings
3.0 4.7 60 18 1.5 5.0 5.0 0.5
Unit
V A A A A2
- sec V V W W °C °C...
