2SA1186 Datasheet PDF

LAPT 2SA1186 Application : Audio and General Purpose (Ta=25°C) 2SA1186 –100max –100max –150min 50min∗ –2.0max 60typ 110typ V pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1186 –150 –150 –5 –10 –2 100(Ta=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=1A VCB=–80V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA V 19.9±0.3 4.0 a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.8typ tf (µs) 0.2typ 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. 00 –4 –...