2SA1216 Datasheet PDF

LAPT 2SA1216 Application : Audio and General Purpose (Ta=25°C) 2SA1216 –100max –100max –180min 30min∗ –2.0max 40typ 500typ V MHz pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1216 –180 –180 –5 –17 –5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics SymboI VCBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–180V VEB=–5V IC=–25mA VCE=–4V, IC=–8A IC=–8A, IB=–0.8A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VB2 (V) 5 IB1 (A) –1 IB2 (A) 1 ton (µs) 0.3typ tstg (µs) 0.7typ tf (µs) 0.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V C...