2SB1625 Datasheet PDF

(7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1625 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1625 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1625 –100max –100max –110min 5000min∗ –2.5max –3.0max –100typ –110typ V V 16.2 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3P) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA V 9.5±0.2 µA 23.0±0.3 a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 3.35 sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ B C E Weight : Approx 6.5g a.