2SC2922 Datasheet PDF

LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 Symbol VCBO VCEO Ratings 180 180 Unit Symbol V ICBO V IEBO Conditions VCB=180V VEB=5V Ratings Unit 100max µA 100max µA 2-ø3.2±0.1 36.4±0.3 24.4±0.2 6.0±0.2 2.1 9 VEBO 5 V V(BR)CEO IC=25mA 180min V 7 21.4±0.3 IC 17 A hFE VCE=4V, IC=8V 30min∗ a IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V b PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz 2 20.0min 4.0max Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3 Tstg –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VB2 IB1 IB2 (V) (Ω) (A) (V) (A) (A) 40 4 10 –5 1 –1 ton (µs) 0.2typ tstg (µs) 1.3typ tf (µs) 0.45typ I C– V CE Characteristics (Typical) V CE( s a t ) – I B Characteristics (Typical) 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 3.0 +0.3 -0.1 igns B C E Weight : Approx 18.4g a.