2SC3264 Datasheet PDF

LAPT 2SC3264 Application : Audio and General Purpose (Ta=25°C) 2SC3264 100max 100max 230min 50min∗ 2.0max 60typ 250typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3264 230 230 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), Y(70 to 140) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.30typ tstg (µs) 2.40typ tf (µs) 0.50typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 3 A .0 0 2.