2SC3832 Datasheet PDF

2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3832 500 400 10 7(Pulse14) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ (Ta=25°C) 2SC3832 Unit External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 µA µA V V MHz pF 2.5 12.0min 4.0max 16.0±0.7 8.8±0.2 a b ø3.75±0.2 V 1.35 0.65 +0.2 -0.1 2.5 B C E 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 66.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Chara...