2SC3834 Datasheet PDF

2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3834 200 120 8 7(Pulse14) 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Humidifier, DC-DC Converter, and General Purpose (Ta=25°C) 2SC3834 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF 2.5 B C E 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit µA µA V 16.0±0.7 8.8±0.2 a b ø3.75±0.2 V 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 50 RL (Ω) 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 0.5max tstg (µs) 3.0max tf (µs) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typi...