2SC3858 Datasheet PDF

2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 Symbol VCBO VCEO Ratings 200 200 Unit Symbol V ICBO V IEBO Conditions VCB=200V VEB=6V Ratings Unit 100max µA 100max µA 2-ø3.2±0.1 36.4±0.3 24.4±0.2 6.0±0.2 2.1 9 VEBO 6 V V(BR)CEO IC=50mA 200min V 7 21.4±0.3 IC 17 A hFE VCE=4V, IC=8A 50min∗ a IB 5 A VCE(sat) IC=10A, IB=1A 2.5max V b PC 200(Tc=25°C) W fT VCE=12V, IE=–1A 20typ MHz 2 20.0min 4.0max Tj 150 °C COB VCB=10V, f=1MHz 300typ pF 3 Tstg –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 40 4 10 10 –5 1 IB2 ton tstg tf (A) (µs) (µs) (µs) –1 0.5typ 1.8typ 0.6typ I C– V CE Characteristics (Typical) V CE( s a t ) – I B Characteristics (Typical) 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 3.0 +0.3 -0.1 igns B C E Weight : Approx 18.4g a.