2SC4140 Datasheet PDF

2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4140 500 400 10 18(Pulse36) 6 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=10A IC=10A, IB=2A IC=10A, IB=2A VCE=12V, IE=–2.0A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 165typ (Ta=25°C) 2SC4140 Unit µA µA V V MHz pF 20.0min 19.9±0.3 4.0 a b ø3.2±0.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 20 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –2 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b.