2SC4298 Datasheet PDF

2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4298 500 400 10 15(Pulse30) 5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=–1.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ (Ta=25°C) 2SC4298 Unit µA 23.0±0.3 V V V MHz pF 9.5±0.2 µA a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.8 IB2 (A) –1.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 3.35 B C E Weight : Approx 6.5g a.