2SC4445 Datasheet PDF

2SC4445 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 900 V VCEO 800 V VEBO 7 V IC 3(Pulse6) A IB 1.5 A PC 60(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO VCB=800V VEB=7V V(BR)CEO hFE VCE(sat) IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A VBE(sat) fT IC=0.7A, IB=0.14A VCE=12V, IE=–0.3A COB VCB=10V, f=1MHz (Ta=25°C) Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ Unit µA µA V V V MHz pF sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 250 357 0.7 10 –5 0.1 IB2 (A) –0.35 ton (µs) 0.7max tstg (µs) 4max tf (µs) 0.7max External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a.