2SC4495 Datasheet PDF

High hFE LOW VCE (sat) Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4495 80 50 6 3 1 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SC4495 Application : Audio Temperature Compensation and General Purpose (Ta=25°C) 2SC4495 10max 10max 50min 500min 0.5max 40typ 30typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1A, IB=20mA VCE=12V, IE=–0.1A VCB=10V,f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA V 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 15 IB2 (mA) –30 ton (µs) 0.45typ tstg (µs) 1.60typ tf (µs) 0.85typ 2.54 3.9 B C E I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 3...