2SC4557 Datasheet PDF

2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4557 900 550 7 10(Pulse20) 5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4557 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.75 IB2 (A) –1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.5max 3.35 B C E Weight : Approx 2.0g a. Type No. b.