2SC5249 Datasheet PDF

2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5249 600 600 7 3(Pulse6) 1.5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC5249 100max 100max 600min 20 to 40 0.5max 1.2max 6typ 50typ V V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA V 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 200 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.1 ton (µs) 1.0max tstg (µs) 19max tf (µs) 1.0max 2.54 3.9 B C E I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 300mA VCE(sat)–IC Characteristics (Typical) 0.5 I C / I B =5 Const.