2SD1796 Datasheet PDF

Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1796 60±10 60±10 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD1796 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1796 10max 10max 60±10 2000min 1.5max 60typ 45 typ V MHz pF 13.0min Equivalent circuit B C (3 k Ω)(1 5 0 Ω) E Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 1.0typ tstg (µs) 4.0typ tf (µs) 1.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a.