2SD2083 Datasheet PDF

Darlington 2SD2083 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2083 10max 10max 120min 2000min 1.8max 2.5max 20typ 340typ V MHz pF 5.45±0.1 B C E 20.0min 4.0max Equivalent circuit B C (2k Ω) (100 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2083 120 120 6 25(Pulse40) 2 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Motor and General Purpose (Ta=25°C) Unit External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 µA mA 19.9±0.3 4.0 V a b ø3.2±0.1 V 2 3 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 24 RL (Ω) 2 IC (A) 12 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 24 IB2 (mA) –24 ton (µs) 1.0typ tstg (µs) 6.0typ tf (µs) 1.0typ Weight : Approx 6.0g a.