Sanken DGG4015
Insulated Gate Bipolar Transistor
FEATURES
Package●Built-in zener Di between collector gate VCL typ. 400V TO252
●Built-in gate protection diode
●SMD PKG TO252
●Low saturated voltage VCE(sat) Max. 1.4V (at VGE=10V, IC=5A) Nov. 2011
APPLICATIONS
●Ignitor Equivalent circuit Absolute maximum ratings (Ta=25°C) Rating CLAMPED ±20 15 55 (Tc=25°C ) 150 Unit V V A W °C °C Characteristic Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Maximum Allowable Power Dissipation Operating Junction Temperature Storage Temperature Symbol VCES VGE IC(DC) PC Tj Tstg -55 to +150 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 Datasheet pdf - SANKEN ELECTRIC DGG4015 Electrical characteristics Nov. 2011 (Ta=25°C) Characteristic Collector to Emitter Breakdown Voltage Symbol Test Conditions Limits MIN.