Sanken DKG1020
Power MOSFET
| Part No. | DKG1020 |
|---|---|
| Datasheet | DKG1020 Download |
| Manufacturer |  Sanken |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Low on-state resistance Built-in gate protection diode SMD PKG Package TO252 Aug. 2011APPLICATIONS
DC / DC converter Switching Internal Equivalent Circuit (2) (1) Key Specifications V(BR)DSS =100V (ID=100uA) R DS(ON)=52 mΩ max. (VGS=10V, ID=10A) R DS(ON)=59 mΩ max. (VGS=4.5V, ID=10A) (3) Absolute maximum ratings Characteristic Drain to Source Voltage Symbol VDSS Rating 100 (Ta=25°C) Unit V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±20 A Maximum Power Dissipation Single Pulse Avalanche Energy PD EAS *1 40 (Tc=25°C) W 62.5 mJ Channel Temperature Tch 150 °C Storage Temperature Maximum Drain to Source dv/dt Tstg dv/dt 1*1 -55 to +150 °C 0.6 V/ns Peak diode recovery dv/dt dv/dt 2*2 5 V/ns Peak diode recovery di/dt di/dt*2 100 A/μs *1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.1 *2 IsD=20A, See Fig.2 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
