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FGT303 - IGBT

Features

  • Generation 3 IGBT (Trench Technology).
  • Low VCE(sat): 1.3V typ.
  • Large Collector Current: Icp=160A March, 2006.
  • Package.
  • TO220F.

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www.DataSheet.co.kr IGBT FGT303 ■Features • Generation 3 IGBT (Trench Technology) • Low VCE(sat): 1.3V typ • Large Collector Current: Icp=160A March, 2006 ■Package—TO220F ■Applications • PDP driver ■Equivalent circuit C(2) G(1) E(3) Absolute maximum ratings (Ta=25°C) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Pulsed Collector Current Maximum Allowable Power Dissipation Operating Junction Temperature Storage Temperature *1. PW ≤ 10μsec, duty cycle ≤ 1% Symbol VCES VGE IC(DC) IC (pulse)*1 PC Tj Tstg 35 Ratings 300 ±20 30 160 (Tc=25°C) 150 -55 to 150 Unit V V A A W °C °C . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 Datasheet pdf - http://www.DataSheet4U.net/ T04-001JA-060224 www.DataSheet.co.
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