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IGBT
FGT303
■Features
• Generation 3 IGBT (Trench Technology) • Low VCE(sat): 1.3V typ • Large Collector Current: Icp=160A
March, 2006
■Package—TO220F
■Applications
• PDP driver
■Equivalent circuit
C(2)
G(1)
E(3)
Absolute maximum ratings (Ta=25°C) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Pulsed Collector Current Maximum Allowable Power Dissipation Operating Junction Temperature Storage Temperature
*1. PW ≤ 10μsec, duty cycle ≤ 1%
Symbol VCES VGE IC(DC) IC (pulse)*1 PC Tj Tstg 35
Ratings 300 ±20 30 160 (Tc=25°C) 150 -55 to 150
Unit V V A A W °C °C
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Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
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Datasheet pdf - http://www.DataSheet4U.net/
T04-001JA-060224
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