Sanken FGT303
IGBT
FEATURES
● Generation 3 IGBT (Trench Technology)● Low VCE(sat): 1.3V typ
● Large Collector Current: Icp=160A March, 2006
●Package—TO220F
●
APPLICATIONS
● PDP driver●Equivalent circuit C(2) G(1) E(3) Absolute maximum ratings (Ta=25°C) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Pulsed Collector Current Maximum Allowable Power Dissipation Operating Junction Temperature Storage Temperature *1. PW ≤ 10μsec, duty cycle ≤ 1% Symbol VCES VGE IC(DC) IC (pulse)*1 PC Tj Tstg 35 Ratings 300 ±20 30 160 (Tc=25°C) 150 -55 to 150 Unit V V A A W °C °C . Sanken Electric Co.,Ltd. 1/9 Datasheet pdf - T04-001JA-060224 IGBT FGT303 Electrical characteristics March, 2006 (Ta=25°C) Parameter Collector to Emitter Breakdown Voltage Gate to Emitter Leakage Current Collector to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitan...