FKI06190 Description
60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190.
FKI06190 Key Features
- V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
- ID ---------------------------------------------------------- 30 A
- RDS(ON) -------- 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A)
- Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant