Sanken FKP253
N-Channel MOSFET
| Part No. | FKP253 |
|---|---|
| Datasheet | FKP253 Download |
| Manufacturer |  Sanken |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Low on-resistance●Low input capacitance
●Avalanche energy capability guaranteed June, 2007
●Package---FM20 (TO220 Full Mold)
●
APPLICATIONS
●PDP driving●High speed switching
●Equivalent circuit D (2) G (1) S (3)
●Absolute maximum ratings Parameter Symbol Rating (Ta=25°C） Unit Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current ID ±20A A Pulsed Drain Current ID(pulse) *1 ±80A A Maximum Power Dissipation Single Pulse Avalanche Energy PD EAS *2 40 (Tc=25°C) W 160 mJ Avalanche Current IAS 20 A Channel Temperature Tch 150 °C Storage Temperature Tstg －55 to 150 °C *1 PW≤100μs，duty cycle≤１% *2 VDD=20V, L=740μH，ILp=20A, unclamped, RG=50Ω, See Fig.1 Sanken Electric Co., Ltd. 1/9 T02-009EA-070531 N-Channel MOS FET FKP253 June, 2007 Parameter Drain to Source breakdown Voltage Electrical characteristics Symbol Test Conditions MIN. (Ta=25°C） Limits Unit TYP. MAX. V(BR)DSS ID=100μA,VGS=0V 250 V Gate to Source Leakage Current IGSS VGS=±30V ±100 nA...
