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N-Channel MOS FET
FKP300A
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed
June, 2007 ■Package---FM100 (TO-3P Full Mold)
■Applications
●PDP driving ●High speed switching
■Equivalent circuit
D (2) G (1)
S (3)
■Absolute maximum ratings
Parameter
Symbol
Rating
(Ta=25°C） Unit
Drain to Source Voltage
VDSS
300
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±30A
A
Pulsed Drain Current
ID(pulse) *1
±120A
A
Maximum Power Dissipation
PD
85 (Tc=25°C)
W
Single Pulse Avalanche Energy
EAS *2
400
mJ
Avalanche Current
IAS
30
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
－55 to 150
°C
*1 PW≤100μs，duty cycle≤1% *2 VDD=20V, L=830μH，ILp=30A, unclamped, RG=50Ω, See Fig.1
Sanken Electric Co.
FKP300A Datasheet
