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MOS FET
FKV575
■Features
• High Current Capability (ID:75A (DC)) •Low on-resistance (RDS(on):7mΩ typ) • Avalanche energy guarantee
November, 2008 ■Package----FM20(TO220 Full Mold)
■Applications
• DC-DC Converters • High speed switching
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
Characteristic
Symbol
Rating
(Ta=25°C） Unit
Drain to Source Voltage
VDSS
50 V
Gate to Source Voltage
VGSS
±20 V
Continuous Drain Current
ID
±75A
A
Pulsed Drain Current
ID(pulse) １)
±200A
A
Maximum Power Dissipation
PD
40 (Tc=25°C)
W
Single Pulse Avalanche Energy
EAS ２)
300 mJ
Avalanche Current IAS 75 A
Channel Temperature Tch 150 °C
Storage Temperature
Tstg －55 to 150
１) PW≤100μs，duty cycle≤１% ２) VDD=20V,L=64μH，ILp=75A,unclamped,RG=50Ω, See Fig.1
°C
.
FKV575 Datasheet
