Sanken FMB-2204
Silicon Schottky Barrier Diode
| Part No. | FMB-2204 |
|---|---|
| Datasheet | FMB-2204 Download |
| Manufacturer |  Sanken |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
High Frequency Rectification 3. Absolute maximum ratings No. Item 1 Transient Peak Reverse Voltage Symbol Unit VRSM V Rating 40 DesignsConditions 2 Peak Reverse Voltage w 3 Average Forward Current Ne 4 Peak Surge Forward Current or 5 I2t Limiting Value VRM V IF(AV) A IFSM A I2t A2s d f 6 Junction Temperature de 7 Storage Temperature Tj °C Tstg °C en No.1,2,4&5 show ratings per one chip. 40 20 150 112 -40～ +150 -40～ +150 mm 4. Electrical characteristics (Ta=25°C ，unless otherwise specified) co No. Item Symbol Unit Value Re 1 Forward Voltage Drop Not 2 Reverse Leakage Current VF V IR mA 0.55 max. 10 max. Refer to Derating of 6 10msec. Half sinewave, one shot 1msec≤t≤10msec Conditions IF=10A VR=VRM 3 Reverse Leakage Current Under High Temperature H･IR mA 350 max. VR=VRM, Tj=150°C 4 Thermal Resistance Rth(j-c) °C /W 4.0 max. Between Junction and case No.1,2,&3 show characteristics per one chip. 041220 1／4 61426-01 SANKEN ELECTRIC CO., LTD. 5. Characteristics FMB-2204 20 Tj=150...
