Sanken FMB-24M
SILICON SCHOTTKY BARRIER DIODE
| Part No. | FMB-24M |
|---|---|
| Datasheet | FMB-24M Download |
| Manufacturer |  Sanken |
| Description | SILICON SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
No. Item Symbol Unit 1 Transient Peak Reverse Voltage VRSM V 2 Peak Reverse Voltage VRM V 3 Average Forward Current IF(AV) A 4 Peak Surge Forward Current IFSM A 5 I2t Limiting Value I2t A2s 6 Junction Temperature 7 Storage Temperature Tj ℃ Tstg ℃ 8 Dielectric Strength kV FMB-24M Rating 45 40 6.0 60 18 -40～+150 -40～+150 A.C. 1.0 Conditions Tc≦123℃，Sinewave half sinewave, one shot 1msec≦t≦10msec Junction and case(1min.) 6.ELECTRICAL CHARACTERISTICS
（Ta=25℃, unless otherwise specified） No. Item Symbol Unit 1 Forward Voltage Drop VF V 2 Reverse Leakage Current IR mA H･IR1 mA 3 Reverse Leakage Current Under High Temperature H･IR2 mA 4 Thermal Resistance Rth(j-C) ℃/W * No.1,2&3 show characteristics per one chip. Value Conditions 0.55 max. IF=3.0A 3.0 max. 30 max. 100 max. VR=VRM VR=VRM, Tj=125℃ VR=VRM, Tj=150℃ 4.0 Max. Between Junction and case SSA-03414 2/8 61329 SANKEN ELECTRIC COMPANY, LTD. 7. Reliability Test 7.1 Test Conditions No. Item Rating 1 Thermal Fatigue...
