Sanken FMB-26
Silicon Schottky Barrier Diode
| Part No. | FMB-26 |
|---|---|
| Datasheet | FMB-26 Download |
| Manufacturer |  Sanken |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
High Frequency Rectification 3. Absolute maximum ratings No. Item 1 Transient Peak Reverse Voltage 2 Peak Reverse Voltage Symbol Unit VRSM V VRM V Rating 60 60 DesignsConditions 3 Average Forward Current w 4 Peak Surge Forward Current Ne 5 I2t Limiting Value or 6 Junction Temperature d f 7 Storage Temperature de 8 Dielectric Strength IF (AV) A IFSM A I2t A2s Tj °C Tstg °C kV 4.0 40 8.0 -40~+150 -40~+150 A.C.1.0 Tc≤128°C, Sinewave 10msec. Half sinewave, one shot 1msec≤t≤10msec Junction and case (1min) en 4. Electrical characteristics(Ta=25°C ，unless otherwise specified) m No. Item Symbol Unit Value com 1 Forward Voltage Drop VF1 V VF2 V 0.58 max. 0.62 max. Re 2 Reverse Leakage Current IR mA Not 3 Reverse Leakage Current Under High Temperature H･IR1 H･IR2 mA mA 2.0 max. 20 max. 70 max. Conditions IF=1.6A IF=2.0A VR=VRM VR=VRM, Tj=125°C VR=VRM, Tj=150°C 4 Thermal Resistance Rth (j-c) °C /W 4.0 max. Between Junction and case No.1,2,&3 show characteristics per one chip. 040128 1／4 61426-01 SANKEN ELECTRIC CO., LTD.
