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KGF65A6H - Trench Field Stop IGBT

Description

The KGF65A6H and MGF65A6H are 650 V Field Stop IGBTs.

Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.

Thus, these Field Stop IGBTs can improve the efficiency of your circuit.

Features

  • Low Saturation Voltage.
  • High Speed Switching.
  • With Integrated Fast Recovery Diode.
  • RoHS Compliant.
  • VCE ------------------------------------------------------ 650 V.
  • IC (TC = 100 °C) ----------------------------------------- 60 A.
  • Short Circuit Withstand Time ----------------------- 10 μs.
  • VCE(sat)-----------------------------------------------1.9 V typ.
  • tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
  • VF------------------------.

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Datasheet preview – KGF65A6H

Datasheet Details

Part number KGF65A6H
Manufacturer Sanken
File Size 636.73 KB
Description Trench Field Stop IGBT
Datasheet download datasheet KGF65A6H Datasheet
Additional preview pages of the KGF65A6H datasheet.

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Full PDF Text Transcription

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VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description The KGF65A6H and MGF65A6H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit. Features ● Low Saturation Voltage ● High Speed Switching ● With Integrated Fast Recovery Diode ● RoHS Compliant ● VCE ------------------------------------------------------ 650 V ● IC (TC = 100 °C) ----------------------------------------- 60 A ● Short Circuit Withstand Time ----------------------- 10 μs ● VCE(sat)-----------------------------------------------1.9 V typ.
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