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http://www.sanken-ele.co.jp
SANKEN ELECTRIC ＭＬＤ６８５Ｄ
Features z z Low on-state resistance Built-in gate protection diode Package
MT100 (TO3P)
Feb. 2011
Applications z z Electric power steering High current switching
Key Specifications z z V(BR)DSS=60V (ID=100μA) RDS(ON)=4.7mΩ Max. (VGS=10V,ID=42A)
Internal Equivalent Circuit
Ｄ(2) Ｇ(1)
Ｓ(3)
Absolute maximum ratings
Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Channel Temperature Storage Temperature
Symbol VDSS VGSS ID ID(pulse) ※１ PD EAS ※2 Tch Tstg
Rating 60 ±20 ± 85 ± 280 1 50 ( Tc =2 5 ℃ ) 2 80 -55~150 -55~150
Unit V V A A W mJ °C °C
※1 PW≦100μsec. duty cycle≦1％ ※2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.
MLD685D Datasheet
