MLD685D Datasheet PDF

FEATURES

z z Low on-state resistance Built-in gate protection diode Package MT100 (TO3P) Feb. 2011

APPLICATIONS

z z Electric power steering High current switching Key Specifications z z V(BR)DSS=60V (ID=100μA) RDS(ON)=4.7mΩ Max. (VGS=10V,ID=42A) Internal Equivalent Circuit Ｄ(2) Ｇ(1) Ｓ(3) Absolute maximum ratings Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID(pulse) ※１ PD EAS ※2 Tch Tstg Rating 60 ±20 ± 85 ± 280 1 50 ( Tc =2 5 ℃ ) 2 80 -55~150 -55~150 Unit V V A A W mJ °C °C ※1 PW≦100μsec. duty cycle≦1％ ※2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.1 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD.