MN638S Overview
Power Transistor MN638S Ratings (Ta=25ºC) Symbol Ratings Unit VCBO 380±50 V VCEO 380±50 V VEBO 6V IC 6 (pulse 10) A IB 1 A PC 60 (Tc=25ºC) W Tj 150 ºC Tstg 55 to +150 ºC Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V,.
