Sanken RA13
Silicon Schottky Barrier Diode
| Part No. | RA13 |
|---|---|
| Datasheet | RA13 Download |
| Manufacturer |  Sanken |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
High Frequency Rectification 3. Flammability UL94V-0(Equivalent) Designs Not Recommended for New 040622 1／5 61426-01 SANKEN ELECTRIC CO., LTD. RA13 4. Absolute maximum ratings No. Item Symbol Unit Rating Conditions 1 Transient Peak Reverse Voltage VRSM V 30 2 Peak Reverse Voltage VRM V 30 3 Average Forward Current IF(AV) A 2.0 Refer to Derating of 7 4 Peak Surge Forward Current IFSM A 50 10msec. Half sinewave, one shot 5 I2t Limiting Value 6 Junction Temperature 7 Storage Temperature I2t A2s Tj °C Tstg °C 12.5 -40～+125 -40～+125 Designs 1msec≤t≤10msec 5. Electrical characteristics (Ta=25°C ，unless otherwise specified) w No. Item Symbol Unit Value Ne 1 Forward Voltage Drop or 2 Reverse Leakage Current VF V IR mA 0.36 max. 3.0 max. ed f 3 Reverse Leakage Current Under High Temperature H･IR mA 140 max. Conditions IF=2.0A VR=VRM VR=VRM, Tj=100°C end 4 Thermal Resistance Rth(j-l) °C /W 15 max. Between Junction and Lead m Note) This product is designed in a manner that the forward loss should be minimized，however as a result the m reverse leakage current cannot be helped being large.
