Sanken RH1C
Silicon Diode
| Part No. | RH1C |
|---|---|
| Datasheet | RH1C Download |
| Manufacturer |  Sanken |
| Description | Silicon Diode |
| Buy | Stock & Price |
APPLICATIONS
High Frequency Rectification, etc. ３ Absolute maximum ratings No. Item Symbol Unit 1 Transient Peak Reverse Voltage VRSM V 2 Peak Reverse Voltage VRM V Rating 1000 1000 Designs Conditions 3 Average Forward Current ew 4 Peak Surge Forward Current r N 5 I2t Limiting Value fo 6 Junction Temperature ed 7 Storage Temperature IF (AV) A IFSM A I2t A2s Tj °C Tstg °C 0.6 35 6.125 -40 to +150 -40 to +150 nd ４ Electrical characteristics (Ta=25°C ，unless otherwise specified) me No. Item ymbol Unit Value m 1 Forward Voltage Drop VF V co 2 Reverse Leakage Current IR µA t Re 3 Reverse Leakage Current Under High Temperature H･IR µA No 4 Reverse Recovery Time Trr-1 µs 1.3 max. 5 max. 70 max. 4.0 max. Refer to derating curve in Section 6 10ms. Half sine wave, one shot 1 ms ≤ t ≤ 10 ms Conditions IF=0.6A VR=VRM VR=VRM, Ta=100°C IF=IRP=10mA 90% Recovery point, Tj=25°C Trr-2 µs 1.3 max. IF=100mA, IR=200mA 75% Recovery point ,Tj=25°C 5 Thermal Resistance Rth (j-l) °C /W 15 max. Between Junction and Lead 130828 1／3 61426-01 SANKEN ELECTRIC CO., LTD. ５ VF test and test circuit RH1C Designs ew ６ Derating N Derating to the ambient temperature.
