Sanken RK14
Silicon Schottky Barrier Diode
| Part No. | RK14 |
|---|---|
| Datasheet | RK14 Download |
| Manufacturer |  Sanken |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
High Frequency Rectification s 3. Absolute maximum ratings n No. Item sig 1 Transient Peak Reverse Voltage De 2 Peak Reverse Voltage w 3 Average Forward Current Ne 4 Peak Surge Forward Current r 5 I2t Limiting Value fo 6 Junction Temperature ed 7 Storage Temperature Symbol Unit VRSM V VRM V IF(AV) A IFSM A I2t A2s Tj °C Tstg °C end 4. Electrical characteristics m No m . Item co 1 Forward Voltage Drop Symbol Unit VF V e 2 Reverse Leakage Current IR mA t R H･IR1 mA No 3 Reverse Leakage Current Under High Temperature H･IR2 mA Rating 45 40 1.7 60 18 -40~+150 -40~+150 Conditions Refer to Derating of 6 10msec. Half sinewave, one shot 1msec≤t≤10msec Value 0.55 max. 5.0 max. 20 max. 70 max. Conditions IF=2.0A VR=VRM VR=VRM, Tj=125°C VR=VRM, Tj=150°C 4 Thermal Resistance Rth(j-l) °C /W 15 max. Between Junction and Lead 040130 1／4 61426-01 SANKEN ELECTRIC CO., LTD. 5. Characteristics RK14 PF (W) Forward Power Dissipation (W) 2.0 Tj=150°C IF(AV) - PF t T t/T=1/6 t/T=1/3,sinewave 1.0...
