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RN4Z Datasheet PDF

Sanken RN4Z

Silicon Diode

Part No. RN4Z
Datasheet RN4Z Download
Manufacturer
Sanken
Description Silicon Diode
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RN4Z datasheet page 1 preview

APPLICATIONS

High Frequency Rectification 3. Flammability UL94V-0(Equivalent) Designs Not Recommended for New ‘110518 SSA-03953 1/7 61426-01 SANKEN ELECTRIC CO., LTD. RN4Z 4. Absolute maximum ratings No. Item Symbol Unit Rating Conditions 1 Transient Peak Reverse Voltage VRSM V 200 2 Peak Reverse Voltage VRM V 200 3 Average Forward Current IF(AV) A 3.5 Refer to Derating of 7 4 Peak Surge Forward Current IFSM A 120 10msec. Half sinewave, one shot 5 I2t Limiting Value 6 Junction Temperature 7 Storage Temperature I2t A2s Tj ℃ Tstg ℃ 72 -40~+150 -40~+150 Designs 1msec≦t≦10msec 5. Electrical characteristics (Ta=25℃ ,unless otherwise specified) ew No. Item Symbol Unit Value N 1 Forward Voltage Drop VF V 0.92 max. or 2 Reverse Leakage Current IR uA ed f 3 Reverse Leakage Current Under High Temperature H・IR mA end 4 Reverse Recovery Time trr1 ns trr2 ns Not Recomm 5 Thermal Resistance Rth(j-l) ℃/W 50 max. 6.0 max. 100 max. 50 max. 8.0 max. Conditions IF=3.5A VR=VRM VR=VRM, Tj=150℃ IF=IRP=500mA 90% Recovery point, IF=500mA,IRP=1A 75% Recovery point, Between Junction and Lead ‘110518 SSA-03953 2/7 61426-01 SANKEN ELECTRIC CO., LTD.
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