Sanken RU4M
Silicon Diode
| Part No. | RU4M |
|---|---|
| Datasheet | RU4M Download |
| Manufacturer |  Sanken |
| Description | Silicon Diode |
| Buy | Stock & Price |
APPLICATIONS
High Frequency Rectification, etc. Not Recommended for New Designs 3. Absolute maximum ratings No. Item 1 Transient Peak Reverse Voltage 2 Peak Reverse Voltage Symbol Unit VRSM VRM V V 3 Average Forward Current IF(AV) A 4 Peak Surge Forward Current 5 Junction Temperature 6 Storage Temperature IFSM A Tj °C Tstg °C Rating 400 400 2.0 (Ta=60°C) 3.5 (Ta=60°C) 70 -40～ +150 -40～ +150 Conditions With out Fin With Fin Refer to 6 10msec. Half sinewave, one shot 4. Electrical characteristics (Ta=25°C, unless otherwise specified) No. Item Symbol Unit 1 Forward Voltage Drop 2 Reverse Leakage Current 3 Reverse Leakage Current Under High Temperature 4 Reverse Recovery Time VF V IR µA H･IR µA Trr-1 µs Trr-2 µs 5 Thermal Resistance Rth(j-l) °C /W Value 1.3 max. 10 max. 300 max. 0.4 max. 0.18 max. 8 max. Conditions IF=3.5A VR=VRM VR=VRM, Tj=100°C IF=IRP=100mA, Ta=25°C 90％ Recovery point IF=100mA, IRP=200mA, Ta=25°C 75% Recovery point Between Junction and Lead 060922 1／3 61426-01 SANKEN ELECTRIC CO., LTD.
