Sanken SDK02
N-channel With built-in flywheel diode
| Part No. | SDK02 |
|---|---|
| Datasheet | SDK02 Download |
| Manufacturer |  Sanken |
| Description | N-channel With built-in flywheel diode |
| Buy | Stock & Price |
SDK02 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) IF IFSM VR PT Tch Tstg Ratings 60 ±10 ±2 N-channel With built-in flywheel diode (Ta=25°C) External dimensions E
●●● SD Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss VSD trr 1.0 1.2 0.19 0.25 400 160 35 1.0 150 1.5 0.24 0.30 Specification min typ max 60 ±500 250 2.0 Unit V nA (Ta=25°C) Unit V V A A A A V W °C °C Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=1.0A VGS=10V, ID=1.0A VGS=4V, ID=1.0A VDS=25V, f=1.0MHz, VGS=0V ISD=2A, VGS=0V ISD=±100mA µA V S Ω Ω pF pF pF V ns ±3 (PW≤100µs, Du≤1%) 1.5 2.5 (PW≤0.5ms, Du≤10%) 120 3 (Ta=25°C, 4-circuit operation) 150 –40 to +150 sEquivalent circuit diagram 16 15 14 13 12 11 10 9 qDiode for flyback voltage absorption Symbol VR min 120 1.6 100 100 Specification typ max Unit V V Ω ns Conditions IR=10µA IF=1A VR=120V IF=±100mA 1 3 5 7 VF IR 2 4 6 8 trr Characteristic curves 170
●●● SD Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss VSD trr 1.0 1.2 0.19 0.25 400 160 35 1.0 150 1.5 0.24 0.30 Specification min typ max 60 ±500 250 2.0 Unit V nA (Ta=25°C) Unit V V A A A A V W °C °C Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=1.0A VGS=10V, ID=1.0A VGS=4V, ID=1.0A VDS=25V, f=1.0MHz, VGS=0V ISD=2A, VGS=0V ISD=±100mA µA V S Ω Ω pF pF pF V ns ±3 (PW≤100µs, Du≤1%) 1.5 2.5 (PW≤0.5ms, Du≤10%) 120 3 (Ta=25°C, 4-circuit operation) 150 –40 to +150 sEquivalent circuit diagram 16 15 14 13 12 11 10 9 qDiode for flyback voltage absorption Symbol VR min 120 1.6 100 100 Specification typ max Unit V V Ω ns Conditions IR=10µA IF=1A VR=120V IF=±100mA 1 3 5 7 VF IR 2 4 6 8 trr Characteristic curves 170