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SHD4101 - Power MOSFET

General Description

The SHD4101 includes four elements (two each of single and dual fast recovery diodes, two N-channel power MOSFETs) in its small HSON package.

The internal power MOSFETs have Zener diodes between gates and sources, thus requiring no externally clamped circuit for an injection coil drive circuit.

Key Features

  • Suitable for High Reliability and Automotive Requirement.
  • AEC-Q101 Qualified.
  • Bare Lead Frame: Pb-free (RoHS Compliant).
  • Built-in Zener Diodes between Gates and Sources.
  • Specifications D1: Single Fast Recovery Diode (200 V, 5 A) D2, D3: Dual Fast Recovery Diodes (200 V, 3 A) Q1: N-channel Power MOSFET (100 V, 10 A) Q2: N-channel Power MOSFET (40 V, 10 A) Typical.

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Datasheet Details

Part number SHD4101
Manufacturer Sanken
File Size 417.57 KB
Description Power MOSFET
Datasheet download datasheet SHD4101 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET Module SHD4101 Data Sheet Description The SHD4101 includes four elements (two each of single and dual fast recovery diodes, two N-channel power MOSFETs) in its small HSON package. The internal power MOSFETs have Zener diodes between gates and sources, thus requiring no externally clamped circuit for an injection coil drive circuit. Supplied in a low thermal resistance package, the product achieves high performance in heat dissipation.