SKI04024 - N-channel Trench Power MOSFET

Sanken

Key Features

V(BR)DSS --------------------------------- 40 V (ID = 100 µA).
ID ---------------------------------------------------------- 85 A.
RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A).
Qg------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A).
Low Total Gate Charge.
High Speed Switching.
Low On-Resistance.
Capable of 4.5 V Gate Drive.
100 % UIL Tested.
RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

SKI04024 n-channel trench power mosfet by Sanken - Datasheet Preview

Datasheet Details

Part number	SKI04024
Manufacturer	Sanken
File Size	593.06 KB
Description	N-channel Trench Power MOSFET
Datasheet	SKI04024 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SKI04024	N-Channel MOSFET	INCHANGE
SKI04033	N-Channel MOSFET	INCHANGE
SKI04044	N-Channel MOSFET	INCHANGE
SKI03021	N-Channel MOSFET	INCHANGE
SKI03036	N-Channel MOSFET	INCHANGE

Other Datasheets by Sanken

Part Number	Description
SKI04033	N-channel Trench Power MOSFET
SKI04044	N-channel Trench Power MOSFET
SKI03021	N-channel Trench Power MOSFET
SKI03036	N-channel Trench Power MOSFET
SKI03063	N-channel Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A)  Qg------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.