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SKI06073 - N-channel Trench Power MOSFET

Key Features

  • V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 78 A.
  • RDS(ON) ----------6.6 mΩ max. (VGS = 10 V, ID = 39.0 A).
  • Qg------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

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Datasheet Details

Part number SKI06073
Manufacturer Sanken
File Size 592.68 KB
Description N-channel Trench Power MOSFET
Datasheet download datasheet SKI06073 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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60 V, 78 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI06073 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 78 A  RDS(ON) ----------6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)  Qg------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.