SKI06106 - N-channel Trench Power MOSFET

Sanken

Key Features

V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
ID ---------------------------------------------------------- 57 A.
RDS(ON) ----------9.2 mΩ max. (VGS = 10 V, ID = 28.5 A).
Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A).
Low Total Gate Charge.
High Speed Switching.
Low On-Resistance.
Capable of 4.5 V Gate Drive.
100 % UIL Tested.
RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

SKI06106 n-channel trench power mosfet by Sanken - Datasheet Preview

Datasheet Details

Part number	SKI06106
Manufacturer	Sanken
File Size	594.49 KB
Description	N-channel Trench Power MOSFET
Datasheet	SKI06106 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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60 V, 57 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 57 A  RDS(ON) ----------9.2 mΩ max. (VGS = 10 V, ID = 28.5 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.