SKI10123 - N-channel Trench Power MOSFET

Datasheet Summary

Features

V(BR)DSS --------------------------------100 V (ID = 100 µA).
ID ---------------------------------------------------------- 66 A.
RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A).
Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A).
Low Total Gate Charge.
High Speed Switching.
Low On-Resistance.
Capable of 4.5 V Gate Drive.
100 % UIL Tested.
RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

Sanken

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Datasheet Details

Part number	SKI10123
Manufacturer	Sanken
File Size	591.64 KB
Description	N-channel Trench Power MOSFET
Datasheet	SKI10123 Datasheet
Additional preview pages of the SKI10123 datasheet.

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Full PDF Text Transcription

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100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 66 A  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.

Published: Apr 18, 2016 |